(09:05am-09:45am / Monday, November 22, 2010)

In this talk, it is mentioned that the display industry will be growing up continuously to the larger size and the faster frame rate, even though the fundamental technology and the materials are facing many difficulties. In order to achieve the future display industry expansion, it is defined what material should be found or developed, and what kind of the process technology should be prepared. At the same time, environmental issues are concerned.

Biography

(09:45am-10:30am / Monday, November 22, 2010)

The continuing expansion of world economy since the end of world -war II has been in large part due to global business improvements based on the rapid technology developments which has helped creating the increasing demand of new goods and services. One of the most prominent technologies which contributed to such trend has been the semiconductor integrated device and circuits technology, enabling a large scope of Information Technology and Business developments. We are now so accustomed to the use of various home, office and mobile systems which are all enabled by ever improving ULSI chips.
It is well known that all such ULSI chips are fabricated on silicon wafers. It may not be so well recognized, however, that the technical specifications and quality of such silicon wafers are constantly upgraded in crystal perfection, dopant and impurity distribution, and the mechanical properties and structures. As the ULSI technology is evolved into sub-20 nanometer geometry, the transistors, capacitors and interconnect structures are sensitively affected by any tiny imperfections in the bulk and surface abnormalities. Metallic contaminations also affect the operation of circuits or storage of electrons in tiny nodes which may cause errors in the information processing. The yield of the chips is also sensitively affected by the tiny particles or surface structure imperfections, which have not been critical in larger dimension process technologies.
In this paper, the history of the 40 years of constant technical developments in silicon wafers will be reviewed. The wafers are also evolving into various different structures; namely annealed wafers, epitaxial wafers and various types of artificially doped, damaged and controlled imperfection wafers, which are tailored to the specific needs of fabrication processes, final circuit operation, reliability needs and manufacturing yield improvements. To better develop such high technology and nano level wafers, the adoption of various analytical measurement techniques are imperative in the design and optimization of the wafer technologies.

Biography

(09:00am-09:45am / Tuesday, November 23, 2010)

Firstly, the state of the art of synthesis of various nano-carbon materials that we have studied so far will be reviewed with the emphasis on the key points of the synthesis. One of challenge in the formation of SWCNT is to control its diameter and chirality, for which we tried to grow SWCNTs using metal catalyst of uni-sized metal clusters. The usual size of carbon nanohorn (CNH) aggregates, which might be used for drug carrier for drug delivery system, potable super-capacitor, etc., is about 80 nm in diameter but its smaller size of less than 30nm is needed for a bio-medical application purpose because of their higher permeation through biological cell membranes [1]. The small CNHs have been successfully realized by optimizing parameters for the growth of CNHs in CO2 laser ablation method of a carbon rod.
Formation of a large size graphene sheet by thermal CVD method using a copper substrate foil has been reported [2]. The method requires a high temperature CVD reactor (near 1000ˇÉ), so that it cannot be used in a conventional Si device process and therefore an alternative low temperature synthesis of graphene is needed. For this purpose we developed a new micro-wave CVD method which has been developed originally for the nano-diamond film growth at low temperature down to room temperature [3]. We shall demonstrate the growth of an A4-size graphene sheet grown at 300ˇÉ.
In the last half part of the presentation will be concerned with structural characterization of nano-carbon materials using atom-resolution electron microscopes as well as other characterization methods of Raman, photoluminescence and optical absorption spectroscopy, etc The advantage of high resolution electron microscopy (HRTEM) over other techniques is to be able to characterize local atomic structures such as lattice defects and edge structures of nano materials which cannot be studied in conventional techniques. Another emphasis of HRTEM will be on dynamic observation of a reaction process which is not available for other high resolution probe microscope techniques such as STM. Some examples of above mentioned observations will be demonstrated [4-12].

Biography

* 1999-Present: Professor, Meijo University, Nagoya (Visiting Lecturer, 1998 - 1999)
* 2001-Present: Director, Nanotube Research Center, National Institute of Advanced Industrial Science
* and Technology (AIST), Tsukuba
* 2005-Present: Dean, Sungkyunkwan University, Advanced Institute of Nanotechnology (SAINT)
* 2007-Present: Distinguished Invited University Professor of Nagoya University, Nagoya

(09:45am-10:30am / Tuesday, November 23, 2010)

Spintronics has been attracting much attention as a new electronics useful for reducing energy consumption and keeping green environment. ˇ°Spin currentˇ±, i.e., the flow of spin, in magnetic nanostructures has emerged as a fascinating physical concept during the recent development of spintronics study. In magnetic nanostructures, magnetism correlates strongly with electronic transport and also other physical properties, leading to the mutual control of magnetic, transport, and other physical properties. Spin current is the most basic concept relevant to the mutual control, which is utilized in spintronics.
In contrast to electric current, i.e., the flow of charge, the spin current is the flow of angular momentum, and changes through the transfer of angular momentum. The spin current, which is usually generated through the phenomena such as spin injection and spin accumulation, annihilates through spin relaxation and spin diffusion. The generation and the annihilation of spin current is accompanied by the transformation with other physical quantities; therefore the spin current can be controlled by a physical signal (magnetic, electric, optical, etc.), and conversely the physical signal can be controlled by the spin current. Efficient generation and precise control of spin current in magnetic nanostructures are key technologies for the further development of spintronics. For a recent few years, spin current has been extensively investigated, and the understanding of spin current has dramatically developed.
In my talk, the concept, historical background, and recent progress in research of spin current including materials research will be reviewed in relation to future prospect of spintronics that is expected to contribute to green innovation.

Biography